AS4C16M16SA-6BIN

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Main description DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TFBGA Tray
DRAM Chip SDRAM 256Mbit 16Mx16 3.3V 54-Pin TFBGA Tray

Informacje podstawowe

  • ProducentAlliance Memory
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Inventory 3
  • MaskPart AS4C16M16SA6BIN%
  • IntroductionDate Mar 19, 2015

Parametry

  • Address Bus Width (bit) 15
  • Data Bus Width (bit) 16
  • Density (bit) 256M
  • Density in Bits (bit) 268435456
  • Interface Type LVTTL
  • Maximum Access Time (ns) 6
  • Maximum Operating Supply Voltage (V) 3.6
  • Minimum Operating Supply Voltage (V) 3
  • Number of Bits per Word (bit) 16
  • Number of I/O Lines (bit) 16
  • Number of Internal Banks 4
  • Number of Words per Bank 4M
  • Operating Supply Voltage (V) 3.3
  • Organization 16Mx16
  • Type SDRAM
  • Typical Operating Supply Voltage (V) 3.3
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