AS4C16M32MD1-5BIN

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Main description DRAM Chip Mobile LPDDR SDRAM 512Mbit 16Mx32 1.8V 90-Pin FBGA Tray
DRAM Chip Mobile LPDDR SDRAM 512Mbit 16Mx32 1.8V 90-Pin FBGA Tray

Informacje podstawowe

  • ProducentAlliance Memory
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 151
  • Inventory 2
  • MaskPart AS4C16M32MD15BIN%
  • IntroductionDate Jul 19, 2014

Parametry

  • Address Bus Width (bit) 15
  • Data Bus Width (bit) 32
  • Density (bit) 512M
  • Density in Bits (bit) 536870912
  • Interface Type LVCMOS
  • Maximum Access Time (ns) 6.5|5
  • Maximum Clock Rate (MHz) 400
  • Maximum Operating Current (mA) 85
  • Maximum Operating Supply Voltage (V) 1.95
  • Maximum Operating Temperature (°C) 85
  • Maximum Storage Temperature (°C) 150
  • Minimum Operating Supply Voltage (V) 1.7
  • Minimum Operating Temperature (°C) -40
  • Minimum Storage Temperature (°C) -55
  • Number of Bits per Word (bit) 32
  • Number of I/O Lines (bit) 32
  • Number of Internal Banks 4
  • Number of Words per Bank 4M
  • Operating Supply Voltage (V) 1.8
  • Organization 16Mx32
  • Supplier Temperature Grade Industrial
  • Type Mobile LPDDR SDRAM
  • Typical Operating Supply Voltage (V) 1.8
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