AS4C2M32S-6BIN

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Main description DRAM Chip SDRAM 64Mbit 2Mx32 3.3V 90-Pin TFBGA Tray
DRAM Chip SDRAM 64Mbit 2Mx32 3.3V 90-Pin TFBGA Tray

Informacje podstawowe

  • ProducentAlliance Memory
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 107
  • Inventory 5
  • MaskPart AS4C2M32S6BIN%
  • IntroductionDate Mar 20, 2013

Parametry

  • Address Bus Width (bit) 13
  • Data Bus Width (bit) 32
  • Density (bit) 64M
  • Density in Bits (bit) 67108864
  • Interface Type LVTTL
  • Maximum Access Time (ns) 6|5.4
  • Maximum Clock Rate (MHz) 166
  • Maximum Operating Current (mA) 100
  • Maximum Operating Supply Voltage (V) 3.6
  • Maximum Operating Temperature (°C) 85
  • Maximum Storage Temperature (°C) 150
  • Minimum Operating Supply Voltage (V) 3
  • Minimum Operating Temperature (°C) -40
  • Minimum Storage Temperature (°C) -55
  • Number of Bits per Word (bit) 32
  • Number of I/O Lines (bit) 32
  • Number of Internal Banks 4
  • Number of Words per Bank 512K
  • Operating Supply Voltage (V) 3.3
  • Organization 2Mx32
  • Supplier Temperature Grade Industrial
  • Type SDRAM
  • Typical Operating Supply Voltage (V) 3.3
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