AS4C32M16S-7TIN

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Main description DRAM Chip SDRAM 512Mbit 32Mx16 3.3V
DRAM Chip SDRAM 512Mbit 32Mx16 3.3V

Informacje podstawowe

  • ProducentAlliance Memory
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • MaskPart AS4C32M16S7TIN%
  • IntroductionDate Mar 01, 2012

Parametry

  • Address Bus Width (bit) 15
  • Data Bus Width (bit) 16
  • Density (bit) 512M
  • Density in Bits (bit) 536870912
  • Interface Type LVTTL
  • Maximum Access Time (ns) 6|5.4
  • Maximum Clock Rate (MHz) 133
  • Maximum Operating Current (mA) 130
  • Maximum Operating Supply Voltage (V) 3.6
  • Maximum Operating Temperature (°C) 85
  • Maximum Storage Temperature (°C) 125
  • Minimum Operating Supply Voltage (V) 3
  • Minimum Operating Temperature (°C) -40
  • Minimum Storage Temperature (°C) -55
  • Number of Bits per Word (bit) 16
  • Number of I/O Lines (bit) 16
  • Number of Internal Banks 4
  • Number of Words per Bank 8M
  • Operating Supply Voltage (V) 3.3
  • Organization 32Mx16
  • Supplier Temperature Grade Industrial
  • Type SDRAM
  • Typical Operating Supply Voltage (V) 3.3
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