AS4C4M16S-6TIN

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Main description DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TSOP-II Tray
DRAM Chip SDRAM 64Mbit 4Mx16 3.3V 54-Pin TSOP-II Tray

Informacje podstawowe

  • ProducentAlliance Memory
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 335
  • PCNs 3
  • MaskPart AS4C4M16S6TIN%
  • IntroductionDate Jan 20, 2008

Parametry

  • Address Bus Width (bit) 14
  • Data Bus Width (bit) 16
  • Density (bit) 64M
  • Density in Bits (bit) 67108864
  • Interface Type LVTTL
  • Maximum Access Time (ns) 6|5.4
  • Maximum Clock Rate (MHz) 166
  • Maximum Operating Current (mA) 100
  • Maximum Operating Supply Voltage (V) 3.6
  • Maximum Operating Temperature (°C) 85
  • Maximum Storage Temperature (°C) 125
  • Minimum Operating Supply Voltage (V) 3
  • Minimum Operating Temperature (°C) -40
  • Minimum Storage Temperature (°C) -55
  • Number of Bits per Word (bit) 16
  • Number of I/O Lines (bit) 16
  • Number of Internal Banks 4
  • Number of Words per Bank 1M
  • Operating Supply Voltage (V) 3.3
  • Organization 4Mx16
  • Supplier Temperature Grade Industrial
  • Type SDRAM
  • Typical Operating Supply Voltage (V) 3.3
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