AS4C512M8D3L-12BCN

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Main description DRAM Chip DDR3 SDRAM 4Gbit 512Mx8 1.35V/1.5V 78-Pin FBGA Tray
DRAM Chip DDR3 SDRAM 4Gbit 512Mx8 1.35V/1.5V 78-Pin FBGA Tray

Informacje podstawowe

  • ProducentAlliance Memory
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 95
  • PCNs 1
  • MaskPart AS4C512M8D3L12BCN%
  • IntroductionDate Apr 01, 2014

Parametry

  • Address Bus Width (bit) 19
  • Data Bus Width (bit) 8
  • Density (bit) 4G
  • Density in Bits (bit) 4294967296
  • Interface Type N/A
  • Maximum Access Time (ns) 20
  • Maximum Clock Rate (MHz) 800
  • Maximum Operating Current (mA) 168
  • Maximum Operating Supply Voltage (V) 1.45|1.575
  • Maximum Operating Temperature (°C) 95
  • Maximum Storage Temperature (°C) 100
  • Minimum Operating Supply Voltage (V) 1.283|1.425
  • Minimum Operating Temperature (°C) 0
  • Minimum Storage Temperature (°C) -55
  • Number of Bits per Word (bit) 8
  • Number of I/O Lines (bit) 8
  • Number of Internal Banks 8
  • Number of Words per Bank 64M
  • Operating Supply Voltage (V) 1.35|1.5
  • Organization 512Mx8
  • Supplier Temperature Grade Commercial
  • Type DDR3 SDRAM
  • Typical Operating Supply Voltage (V) 1.35|1.5
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