AS4C8M16S-7BCN

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Main description DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54-Pin TFBGA Tray
DRAM Chip SDRAM 128Mbit 8Mx16 3.3V 54-Pin TFBGA Tray

Informacje podstawowe

  • ProducentAlliance Memory
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 45
  • PCNs 3
  • MaskPart AS4C8M16S7BCN%
  • IntroductionDate Mar 25, 2009

Parametry

  • Address Bus Width (bit) 14
  • Data Bus Width (bit) 16
  • Density (bit) 128M
  • Density in Bits (bit) 134217728
  • Interface Type LVTTL
  • Maximum Access Time (ns) 6|5.4
  • Maximum Clock Rate (MHz) 143
  • Maximum Operating Current (mA) 130
  • Maximum Operating Supply Voltage (V) 3.6
  • Maximum Operating Temperature (°C) 70
  • Maximum Storage Temperature (°C) 125
  • Minimum Operating Supply Voltage (V) 3
  • Minimum Operating Temperature (°C) 0
  • Minimum Storage Temperature (°C) -55
  • Number of Bits per Word (bit) 16
  • Number of I/O Lines (bit) 16
  • Number of Internal Banks 4
  • Number of Words per Bank 2M
  • Operating Supply Voltage (V) 3.3
  • Organization 8Mx16
  • Supplier Temperature Grade Commercial
  • Type SDRAM
  • Typical Operating Supply Voltage (V) 3.3
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