AS4C8M32S-7BCN

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Main description DRAM Chip SDRAM 256Mbit 8Mx32 3.3V 90-Pin TFBGA Tray
DRAM Chip SDRAM 256Mbit 8Mx32 3.3V 90-Pin TFBGA Tray

Informacje podstawowe

  • ProducentAlliance Memory
  • EURoHSYes (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 189
  • Inventory 2
  • PCNs 1
  • MaskPart AS4C8M32S7BCN%
  • IntroductionDate Mar 25, 2013

Parametry

  • Address Bus Width (bit) 14
  • Data Bus Width (bit) 32
  • Density (bit) 256M
  • Density in Bits (bit) 268435456
  • Interface Type LVTTL
  • Maximum Access Time (ns) 6|5.4
  • Maximum Clock Rate (MHz) 133
  • Maximum Operating Current (mA) 260
  • Maximum Operating Supply Voltage (V) 3.6
  • Maximum Operating Temperature (°C) 70
  • Maximum Storage Temperature (°C) 125
  • Minimum Operating Supply Voltage (V) 3
  • Minimum Operating Temperature (°C) 0
  • Minimum Storage Temperature (°C) -55
  • Number of Bits per Word (bit) 32
  • Number of I/O Lines (bit) 32
  • Number of Internal Banks 4
  • Number of Words per Bank 2M
  • Operating Supply Voltage (V) 3.3
  • Organization 8Mx32
  • Supplier Temperature Grade Commercial
  • Type SDRAM
  • Typical Operating Supply Voltage (V) 3.3
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