BC807-40-B0 RFG
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|---|---|
| Main description | Trans GP BJT PNP 45V 0.5A 300mW 3-Pin SOT-23 T/R |
Trans GP BJT PNP 45V 0.5A 300mW 3-Pin SOT-23 T/R
Informacje podstawowe
- ProducentTaiwan Semiconductor
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 259
- MaskPart BC80740B0%G
- IntroductionDate Aug 27, 2007
Parametry
- Category Bipolar Small Signal
- Configuration Single
- Material N/A
- Maximum 3rd Order Intercept Point (dBm) N/R
- Maximum Base Emitter Saturation Voltage (V) 1.2@50mA@500mA
- Maximum Collector Base Voltage (V) 50
- Maximum Collector Cut-Off Current (nA) 200
- Maximum Collector-Emitter Saturation Voltage (V) 0.7@50mA@500mA
- Maximum Collector-Emitter Voltage (V) 45
- Maximum DC Collector Current (A) 0.5
- Maximum Delay Time (ns) N/A
- Maximum Emitter Base Voltage (V) 5
- Maximum Emitter Cut-Off Current (nA) 100
- Maximum Fall Time (ns) N/A
- Maximum Junction Ambient Thermal Resistance N/A
- Maximum Junction Case Thermal Resistance N/A
- Maximum Noise Figure (dB) N/A
- Maximum Power 1dB Compression (dBm) N/R
- Maximum Power Dissipation (mW) 300
- Maximum Rise Time (ns) N/A
- Maximum Storage Temperature (°C) 150
- Maximum Storage Time (ns) N/A
- Maximum Transition Frequency (MHz) 100
- Maximum Turn-Off Time (ns) N/A
- Maximum Turn-On Time (ns) N/A
- Minimum DC Current Gain 250@100mA@1V
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Operational Bias Conditions N/R
- Output Power (W) N/R
- Supplier Temperature Grade N/A
- Type PNP
- Typical Input Capacitance (pF) N/A
- Typical Output Capacitance (pF) N/A
- Typical Power Gain (dB) N/R