BC847BLT1G

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Main description	Trans GP BJT NPN 45V 0.1A 300mW 3-Pin SOT-23 T/R

Trans GP BJT NPN 45V 0.1A 300mW 3-Pin SOT-23 T/R

Informacje podstawowe

Crosses 538
Inventory 11
PCNs 31
GIDEP-Alerts 2
MaskPart BC847BL%G
IntroductionDate Jul 11, 1997
SupplierUrl http://www.onsemi.com/PowerSolutions/search.do?query=BC847BLT1G&tabbed=Y&clearFilters=Y&searchType=others

Category Bipolar Small Signal
Configuration Single
Material Si
Maximum 3rd Order Intercept Point (dBm) N/R
Maximum Base Current (A) N/A
Maximum Base Emitter Saturation Voltage (V) 0.7(Typ)@0.5mA@10mA|0.9(Typ)@5mA@100mA
Maximum Collector Base Voltage (V) 50
Maximum Collector Cut-Off Current (nA) 15
Maximum Collector-Emitter Saturation Voltage (V) 0.25@0.5mA@10mA|0.6@5mA@100mA
Maximum Collector-Emitter Voltage (V) 45
Maximum DC Collector Current (A) 0.1
Maximum Delay Time (ns) N/A
Maximum Emitter Base Voltage (V) 6
Maximum Emitter Cut-Off Current (nA) N/A
Maximum Fall Time (ns) N/A
Maximum Junction Ambient Thermal Resistance 556°C/W
Maximum Junction Case Thermal Resistance N/A
Maximum Noise Figure (dB) 10
Maximum Offset Voltage (mV) N/A
Maximum Operating Temperature (°C) 150
Maximum Power 1dB Compression (dBm) N/R
Maximum Power Dissipation (mW) 300
Maximum Rise Time (ns) N/A
Maximum Storage Temperature (°C) 150
Maximum Storage Time (ns) N/A
Maximum Transition Frequency (MHz) 100(Min)
Maximum Turn-Off Time (ns) N/A
Maximum Turn-On Time (ns) N/A
Minimum DC Current Gain 200@2mA@5V
Minimum Operating Temperature (°C) -55
Minimum Storage Temperature (°C) -55
Number of Elements per Chip 1
Operating Junction Temperature (°C) -55 to 150
Operational Bias Conditions N/R
Output Power (W) N/R
Supplier Temperature Grade N/A
Type NPN
Typical Input Capacitance (pF) N/A
Typical Output Capacitance (pF) 4.5(Max)
Typical Power Gain (dB) N/R