DMG1012UW-7
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R |
Trans MOSFET N-CH 20V 1A 3-Pin SOT-323 T/R
Informacje podstawowe
- ProducentDiodes Incorporated
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 7
- Inventory 7
- PCNs 19
- GIDEP-Alerts 3
- MaskPart DMG1012UW%
- IntroductionDate Sep 08, 2009
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Material N/A
- Maximum Continuous Drain Current (A) 1
- Maximum Drain Source Resistance (mOhm) 450@4.5V
- Maximum Drain Source Voltage (V) 20
- Maximum Gate Source Leakage Current (nA) 1000
- Maximum Gate Source Voltage (V) ±6
- Maximum Gate Threshold Voltage (V) 1
- Maximum IDSS (uA) 0.1
- Maximum Power Dissipation (mW) 290
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology N/A
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 12.3
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) 0.7366@4.5V
- Typical Input Capacitance @ Vds (pF) 60.67@16V
- Typical Rise Time (ns) 7.4
- Typical Turn-Off Delay Time (ns) 26.7
- Typical Turn-On Delay Time (ns) 5.1