DMP10H400SE-13
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET P-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R |
Trans MOSFET P-CH 100V 2.3A 4-Pin(3+Tab) SOT-223 T/R
Informacje podstawowe
- ProducentDiodes Incorporated
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 1
- Inventory 6
- PCNs 14
- MaskPart DMP10H400SE%
- IntroductionDate Nov 09, 2015
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Single Dual Drain
- Material N/A
- Maximum Continuous Drain Current (A) 2.3
- Maximum Drain Source Resistance (mOhm) 250@10V
- Maximum Drain Source Voltage (V) 100
- Maximum Gate Source Leakage Current (nA) 100
- Maximum Gate Source Voltage (V) ±20
- Maximum Gate Threshold Voltage (V) 3
- Maximum IDSS (uA) 1
- Maximum Power Dissipation (mW) 2000
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology N/A
- Supplier Temperature Grade Automotive
- Typical Fall Time (ns) 34.4
- Typical Gate Charge @ 10V (nC) 17.5
- Typical Gate Charge @ Vgs (nC) 17.5@10V|8.4@4.5V
- Typical Input Capacitance @ Vds (pF) 1239@25V
- Typical Rise Time (ns) 14.9
- Typical Turn-Off Delay Time (ns) 57.4
- Typical Turn-On Delay Time (ns) 9.1