FDC604P
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET P-CH 20V 5.5A 6-Pin SuperSOT T/R |
Trans MOSFET P-CH 20V 5.5A 6-Pin SuperSOT T/R
Informacje podstawowe
- ProducentON Semiconductor
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 89
- Inventory 7
- PCNs 43
- MaskPart FDC604P%
- IntroductionDate Jul 05, 2000
- SupplierUrl http://www.onsemi.com/PowerSolutions/search.do?query=FDC604P&tabbed=Y&clearFilters=Y&searchType=others
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Single Quad Drain
- Material N/A
- Maximum Continuous Drain Current (A) 5.5
- Maximum Drain Source Resistance (mOhm) 33@4.5V
- Maximum Drain Source Voltage (V) 20
- Maximum Gate Source Leakage Current (nA) 100
- Maximum Gate Source Voltage (V) ±8
- Maximum Gate Threshold Voltage (V) 1.5
- Maximum IDSS (uA) 1
- Maximum Power Dissipation (mW) 1600
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology TMOS
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 45
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) 19@4.5V
- Typical Input Capacitance @ Vds (pF) 1926@10V
- Typical Rise Time (ns) 11
- Typical Turn-Off Delay Time (ns) 90
- Typical Turn-On Delay Time (ns) 13