FDN306P
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET P-CH 12V 2.6A 3-Pin SuperSOT T/R |
Trans MOSFET P-CH 12V 2.6A 3-Pin SuperSOT T/R
Informacje podstawowe
- ProducentON Semiconductor
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 28
- Inventory 13
- PCNs 40
- GIDEP-Alerts 2
- MaskPart FDN306P%
- IntroductionDate Dec 20, 2001
- SupplierUrl http://www.onsemi.com/PowerSolutions/search.do?query=FDN306P&tabbed=Y&clearFilters=Y&searchType=others
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Single
- Material N/A
- Maximum Continuous Drain Current (A) 2.6
- Maximum Drain Source Resistance (mOhm) 40@4.5V
- Maximum Drain Source Voltage (V) 12
- Maximum Gate Source Voltage (V) ±8
- Maximum Power Dissipation (mW) 500
- Number of Elements per Chip 1
- Process Technology TMOS
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 35
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) 12@4.5V
- Typical Input Capacitance @ Vds (pF) 1138@6V
- Typical Rise Time (ns) 10
- Typical Turn-Off Delay Time (ns) 38
- Typical Turn-On Delay Time (ns) 11