IRF7104TRPBF
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET P-CH Si 20V 2.3A 8-Pin SOIC T/R |
Trans MOSFET P-CH Si 20V 2.3A 8-Pin SOIC T/R
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 7
- Inventory 5
- PCNs 49
- MaskPart IRF7104%PBF
- IntroductionDate Aug 25, 1997
- EnablingEnergyEfficiency No
- AliasParts SP001564756
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7104TRPBF
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Dual Dual Drain
- Material Si
- Maximum Continuous Drain Current (A) 2.3
- Maximum Continuous Drain Current @ Temperature (A) 1.8@Ta=70C
- Maximum Drain Source Resistance (mOhm) 250@10V
- Maximum Drain Source Resistance @ Vgs (mOhm) 250@10V|400@4.5V
- Maximum Drain Source Voltage (V) 20
- Maximum Gate Source Leakage Current (nA) 100
- Maximum Gate Source Voltage (V) ±12
- Maximum Gate Threshold Voltage (V) 3
- Maximum IDSS (uA) 2
- Maximum Junction Ambient Thermal Resistance 62.5°C/W
- Maximum Junction Case Thermal Resistance N/A
- Maximum Power Dissipation (mW) 2000
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 2
- Process Technology HEXFET
- Supplier Temperature Grade N/A
- Tradename HEXFET®
- Typical Drain Source Resistance @ 125°C (mOhm) N/A
- Typical Drain Source Resistance @ 25°C (mOhm) 190@10V|300@4.5V
- Typical Fall Time (ns) 30
- Typical Forward Transconductance (S) 2.5
- Typical Gate Charge @ 10V (nC) 9.3
- Typical Gate Charge @ Vgs (nC) 9.3@10V
- Typical Gate Resistance (Ohm) N/A
- Typical Gate to Drain Charge (nC) 3
- Typical Gate to Source Charge (nC) 1.6
- Typical Input Capacitance @ Vds (pF) 290@15V
- Typical Output Capacitance (pF) 210
- Typical Reverse Recovery Charge (nC) 90
- Typical Rise Time (ns) 16
- Typical Switch Charge (nC) N/A
- Typical Turn-Off Delay Time (ns) 42
- Typical Turn-On Delay Time (ns) 12