IRF7406TRPbF-1
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC T/R |
Trans MOSFET P-CH 30V 5.8A 8-Pin SOIC T/R
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes (2011/65/EU)
- Automotive No
Informacje dodatkowe
- Crosses 134
- PCNs 12
- MaskPart IRF7406%PbF1
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7406TRPbF-1
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Single Quad Drain Triple Source
- Material N/A
- Maximum Continuous Drain Current (A) 5.8
- Maximum Drain Source Resistance (mOhm) 45@10V
- Maximum Drain Source Voltage (V) 30
- Maximum Gate Source Leakage Current (nA) 100
- Maximum Gate Source Voltage (V) ±20
- Maximum Gate Threshold Voltage (V) 1(Min)
- Maximum IDSS (uA) 1
- Maximum Power Dissipation (mW) 2500
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology HEXFET
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 47
- Typical Gate Charge @ 10V (nC) 59(Max)
- Typical Gate Charge @ Vgs (nC) 59(Max)@10V
- Typical Input Capacitance @ Vds (pF) 1100@25V
- Typical Rise Time (ns) 33
- Typical Turn-Off Delay Time (ns) 45
- Typical Turn-On Delay Time (ns) 16