IRF7410PbF-1
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET P-CH 12V 16A 8-Pin SOIC T/R |
Trans MOSFET P-CH 12V 16A 8-Pin SOIC T/R
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes (2011/65/EU)
- Automotive No
Informacje dodatkowe
- Crosses 1
- PCNs 12
- MaskPart IRF7410PbF1%
- IntroductionDate Nov 19, 2013
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRF7410PbF-1
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Single Quad Drain Triple Source
- Material N/A
- Maximum Continuous Drain Current (A) 16
- Maximum Drain Source Resistance (mOhm) 7@4.5V
- Maximum Drain Source Voltage (V) 12
- Maximum Gate Source Leakage Current (nA) 100
- Maximum Gate Source Voltage (V) ±8
- Maximum Gate Threshold Voltage (V) 0.9
- Maximum IDSS (uA) 1
- Maximum Power Dissipation (mW) 2500
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology HEXFET
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 200
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) 91@4.5V
- Typical Input Capacitance @ Vds (pF) 8676@10V
- Typical Rise Time (ns) 12
- Typical Turn-Off Delay Time (ns) 271
- Typical Turn-On Delay Time (ns) 13