IRF9530PBF
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET P-CH 100V 12A 3-Pin(3+Tab) TO-220AB |
Trans MOSFET P-CH 100V 12A 3-Pin(3+Tab) TO-220AB
Informacje podstawowe
- ProducentVishay
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 27
- Inventory 9
- PCNs 43
- MaskPart IRF9530PBF%
- IntroductionDate Mar 27, 2007
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Single
- Material N/A
- Maximum Continuous Drain Current (A) 12
- Maximum Drain Source Resistance (mOhm) 300@10V
- Maximum Drain Source Voltage (V) 100
- Maximum Gate Source Voltage (V) ±20
- Maximum Power Dissipation (mW) 88000
- Maximum Storage Temperature (°C) 175
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology HEXFET
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 39
- Typical Gate Charge @ 10V (nC) 38(Max)
- Typical Gate Charge @ Vgs (nC) 38(Max)@10V
- Typical Input Capacitance @ Vds (pF) 860@25V
- Typical Rise Time (ns) 52
- Typical Turn-Off Delay Time (ns) 31
- Typical Turn-On Delay Time (ns) 12