IRFL024NTRPBF
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET N-CH Si 55V 4A 4-Pin(3+Tab) SOT-223 T/R |
Trans MOSFET N-CH Si 55V 4A 4-Pin(3+Tab) SOT-223 T/R
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes with Exemption (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 24
- Inventory 5
- PCNs 31
- MaskPart IRFL024N%PBF
- IntroductionDate Jun 15, 1999
- EnablingEnergyEfficiency No
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRFL024NTRPBF
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single Dual Drain
- Material Si
- Maximum Continuous Drain Current (A) 4
- Maximum Drain Source Resistance (mOhm) 75@10V
- Maximum Drain Source Voltage (V) 55
- Maximum Gate Source Voltage (V) ±20
- Maximum Gate Threshold Voltage (V) 4
- Maximum Power Dissipation (mW) 2100
- Number of Elements per Chip 1
- Process Technology HEXFET
- Typical Fall Time (ns) 17.7
- Typical Gate Charge @ 10V (nC) 18.3(Max)
- Typical Gate Charge @ Vgs (nC) 18.3(Max)@10V
- Typical Input Capacitance @ Vds (pF) 400@25V
- Typical Rise Time (ns) 13.4
- Typical Turn-Off Delay Time (ns) 22.2
- Typical Turn-On Delay Time (ns) 8.1