IRFL110PBF
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 |
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223
Informacje podstawowe
- ProducentVishay
- EURoHSYes with Exemption (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 41
- Inventory 1
- PCNs 38
- GIDEP-Alerts 2
- MaskPart IRFL110PBF%
- IntroductionDate Mar 27, 2007
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single Dual Drain
- Material N/A
- Maximum Continuous Drain Current (A) 1.5
- Maximum Continuous Drain Current @ Temperature (A) 0.96@Tc=100C
- Maximum Continuous Drain Current on PCB @ TC=25°C (A) N/A
- Maximum Diode Forward Voltage (V) 2.5
- Maximum Drain Source Resistance (mOhm) 540@10V
- Maximum Drain Source Resistance @ Vgs (mOhm) 540@10V
- Maximum Drain Source Voltage (V) 100
- Maximum Gate Resistance (Ohm) N/A
- Maximum Gate Source Leakage Current (nA) 100
- Maximum Gate Source Voltage (V) ±20
- Maximum Gate Threshold Voltage (V) 4
- Maximum IDSS (uA) 25
- Maximum Junction Ambient Thermal Resistance 60°C/W
- Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 60
- Maximum Junction Case Thermal Resistance 40°C/W
- Maximum Offset Voltage (mV) N/A
- Maximum Positive Gate Source Voltage (V) 20
- Maximum Power Dissipation (mW) 2000
- Maximum Power Dissipation on PCB @ TC=25°C (W) 2
- Maximum Pulsed Drain Current @ TC=25°C (A) 12
- Maximum Storage Temperature (°C) 150
- Minimum Gate Resistance (Ohm) N/A
- Minimum Gate Threshold Voltage (V) 2
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology N/A
- Supplier Temperature Grade N/A
- Tradename N/A
- Typical Diode Forward Voltage (V) N/A
- Typical Drain Source Resistance @ 125°C (mOhm) N/A
- Typical Drain Source Resistance @ 25°C (mOhm) N/A
- Typical Fall Time (ns) 9.4
- Typical Forward Transconductance (S) 1.1(Min)
- Typical Gate Charge @ 10V (nC) 8.3(Max)
- Typical Gate Charge @ Vgs (nC) 8.3(Max)@10V
- Typical Gate Plateau Voltage (V) 7.5
- Typical Gate Resistance (Ohm) N/A
- Typical Gate Threshold Voltage (V) N/A
- Typical Gate to Drain Charge (nC) 3.8(Max)
- Typical Gate to Source Charge (nC) 2.3(Max)
- Typical Input Capacitance @ Vds (pF) 180@25V
- Typical Output Capacitance (pF) 81
- Typical Reverse Recovery Charge (nC) 440
- Typical Reverse Recovery Time (ns) 100
- Typical Reverse Transfer Capacitance @ Vds (pF) 15@25V
- Typical Rise Time (ns) 16
- Typical Switch Charge (nC) N/A
- Typical Turn-Off Delay Time (ns) 15
- Typical Turn-On Delay Time (ns) 6.9