IRFR9024TRPBF
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|---|---|
| Main description | Trans MOSFET P-CH 60V 8.8A 3-Pin(2+Tab) DPAK T/R |
Trans MOSFET P-CH 60V 8.8A 3-Pin(2+Tab) DPAK T/R
Informacje podstawowe
- ProducentVishay
- EURoHSYes with Exemption (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 65
- Inventory 6
- PCNs 43
- GIDEP-Alerts 3
- MaskPart IRFR9024%PBF
- IntroductionDate Mar 27, 2007
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Single
- Material N/A
- Maximum Continuous Drain Current (A) 8.8
- Maximum Continuous Drain Current @ Temperature (A) 5.6@Tc=100C
- Maximum Continuous Drain Current on PCB @ TC=25°C (A) N/A
- Maximum Diode Forward Voltage (V) 6.3
- Maximum Drain Source Resistance (mOhm) 280@10V
- Maximum Drain Source Resistance @ Vgs (mOhm) 280@10V
- Maximum Drain Source Voltage (V) 60
- Maximum Gate Resistance (Ohm) N/A
- Maximum Gate Source Leakage Current (nA) 100
- Maximum Gate Source Voltage (V) ±20
- Maximum Gate Threshold Voltage (V) 4
- Maximum IDSS (uA) 100
- Maximum Junction Ambient Thermal Resistance 110°C/W
- Maximum Junction Ambient Thermal Resistance on PCB (°C/W) 50
- Maximum Junction Case Thermal Resistance 3°C/W
- Maximum Offset Voltage (mV) N/A
- Maximum Positive Gate Source Voltage (V) 20
- Maximum Power Dissipation (mW) 2500
- Maximum Power Dissipation on PCB @ TC=25°C (W) 2.5
- Maximum Pulsed Drain Current @ TC=25°C (A) 35
- Maximum Storage Temperature (°C) 150
- Minimum Gate Resistance (Ohm) N/A
- Minimum Gate Threshold Voltage (V) 2
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology N/A
- Supplier Temperature Grade N/A
- Tradename N/A
- Typical Diode Forward Voltage (V) N/A
- Typical Drain Source Resistance @ 125°C (mOhm) N/A
- Typical Drain Source Resistance @ 25°C (mOhm) N/A
- Typical Fall Time (ns) 29
- Typical Forward Transconductance (S) 2.9(Min)
- Typical Gate Charge @ 10V (nC) 19(Max)
- Typical Gate Charge @ Vgs (nC) 19(Max)@10V
- Typical Gate Plateau Voltage (V) 5.9
- Typical Gate Resistance (Ohm) N/A
- Typical Gate Threshold Voltage (V) N/A
- Typical Gate to Drain Charge (nC) 11(Max)
- Typical Gate to Source Charge (nC) 5.4(Max)
- Typical Input Capacitance @ Vds (pF) 570@25V
- Typical Output Capacitance (pF) 360
- Typical Reverse Recovery Charge (nC) 320
- Typical Reverse Recovery Time (ns) 100
- Typical Reverse Transfer Capacitance @ Vds (pF) 65@25V
- Typical Rise Time (ns) 68
- Typical Switch Charge (nC) N/A
- Typical Turn-Off Delay Time (ns) 15
- Typical Turn-On Delay Time (ns) 13