IRFRC20TRPBF
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R |
Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) DPAK T/R
Informacje podstawowe
- ProducentVishay
- EURoHSYes with Exemption (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 97
- Inventory 8
- PCNs 43
- GIDEP-Alerts 4
- MaskPart IRFRC20%PBF
- IntroductionDate Mar 27, 2007
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Material N/A
- Maximum Continuous Drain Current (A) 2
- Maximum Drain Source Resistance (mOhm) 4400@10V
- Maximum Drain Source Voltage (V) 600
- Maximum Gate Source Leakage Current (nA) 100
- Maximum Gate Source Voltage (V) ±20
- Maximum Gate Threshold Voltage (V) 4
- Maximum IDSS (uA) 100
- Maximum Power Dissipation (mW) 2500
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology N/A
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 25
- Typical Gate Charge @ 10V (nC) 18(Max)
- Typical Gate Charge @ Vgs (nC) 18(Max)@10V
- Typical Input Capacitance @ Vds (pF) 350@25V
- Typical Rise Time (ns) 23
- Typical Turn-Off Delay Time (ns) 30
- Typical Turn-On Delay Time (ns) 10