IRFS3206PBF
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET N-CH Si 60V 210A 3-Pin(2+Tab) D2PAK Tube |
Trans MOSFET N-CH Si 60V 210A 3-Pin(2+Tab) D2PAK Tube
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes with Exemption (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 49
- Inventory 2
- PCNs 91
- MaskPart IRFS3206PBF%
- IntroductionDate Jun 05, 2006
- EnablingEnergyEfficiency No
- AliasParts SP001557264
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRFS3206PBF
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Material Si
- Maximum Continuous Drain Current (A) 210
- Maximum Drain Source Resistance (mOhm) 3@10V
- Maximum Drain Source Voltage (V) 60
- Maximum Gate Source Voltage (V) ±20
- Maximum Power Dissipation (mW) 300000
- Number of Elements per Chip 1
- Process Technology HEXFET
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 83
- Typical Gate Charge @ 10V (nC) 120
- Typical Gate Charge @ Vgs (nC) 120@10V
- Typical Input Capacitance @ Vds (pF) 6540@50V
- Typical Rise Time (ns) 82
- Typical Turn-Off Delay Time (ns) 55
- Typical Turn-On Delay Time (ns) 19