IRLL2705TRPBF
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET N-CH Si 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R |
Trans MOSFET N-CH Si 55V 5.2A 4-Pin(3+Tab) SOT-223 T/R
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes with Exemption (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 12
- Inventory 10
- PCNs 32
- MaskPart IRLL2705%PBF
- IntroductionDate Jan 22, 1999
- EnablingEnergyEfficiency No
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRLL2705TRPBF
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single Dual Drain
- Material Si
- Maximum Continuous Drain Current (A) 5.2
- Maximum Continuous Drain Current @ Temperature (A) 3@Ta=70C
- Maximum Drain Source Resistance (mOhm) 40@10V
- Maximum Drain Source Resistance @ Vgs (mOhm) 40@10V|51@5V|65@4V
- Maximum Drain Source Voltage (V) 55
- Maximum Gate Source Voltage (V) ±16
- Maximum Gate Threshold Voltage (V) 2
- Maximum Junction Ambient Thermal Resistance 120°C/W
- Maximum Junction Case Thermal Resistance N/A
- Maximum Power Dissipation (mW) 2100
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology HEXFET
- Supplier Temperature Grade N/A
- Typical Drain Source Resistance @ 125°C (mOhm) N/A
- Typical Drain Source Resistance @ 25°C (mOhm) N/A
- Typical Fall Time (ns) 22
- Typical Forward Transconductance (S) 5.1(Min)
- Typical Gate Charge @ 10V (nC) 32
- Typical Gate Charge @ Vgs (nC) 32@10V
- Typical Gate Resistance (Ohm) N/A
- Typical Gate to Drain Charge (nC) 9.7
- Typical Gate to Source Charge (nC) 3.5
- Typical Input Capacitance @ Vds (pF) 870@25V
- Typical Output Capacitance (pF) 220
- Typical Reverse Recovery Charge (nC) 140
- Typical Rise Time (ns) 12
- Typical Switch Charge (nC) N/A
- Typical Turn-Off Delay Time (ns) 35
- Typical Turn-On Delay Time (ns) 6.2