IRLML2803TRPbF-1
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R |
Trans MOSFET N-CH 30V 1.2A 3-Pin SOT-23 T/R
Informacje podstawowe
- ProducentInfineon Technologies AG
- EURoHSYes (2011/65/EU)
- Automotive No
Informacje dodatkowe
- Crosses 14
- PCNs 18
- MaskPart IRLML2803%PbF1
- IntroductionDate Nov 25, 2013
- SupplierUrl http://www.infineon.com/cms/en/product/findProductTypeByName.html?q=IRLML2803TRPbF-1
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single
- Material N/A
- Maximum Continuous Drain Current (A) 1.2
- Maximum Drain Source Resistance (mOhm) 250@10V
- Maximum Drain Source Voltage (V) 30
- Maximum Gate Source Leakage Current (nA) 100
- Maximum Gate Source Voltage (V) ±20
- Maximum Gate Threshold Voltage (V) 1(Min)
- Maximum IDSS (uA) 1
- Maximum Power Dissipation (mW) 540
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology HEXFET
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 1.7
- Typical Gate Charge @ 10V (nC) 3.3
- Typical Gate Charge @ Vgs (nC) 3.3@10V
- Typical Input Capacitance @ Vds (pF) 85@25V
- Typical Rise Time (ns) 4
- Typical Turn-Off Delay Time (ns) 9
- Typical Turn-On Delay Time (ns) 3.9