MRF8372R1
| Do pobrania | Download |
|---|---|
| Main description | Trans RF BJT NPN 16V 0.2A 8-Pin SO T/R |
Trans RF BJT NPN 16V 0.2A 8-Pin SO T/R
Informacje podstawowe
- ProducentMicrosemi
- EURoHSNo (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 7
- PCNs 36
- MaskPart MRF8372%
- IntroductionDate Jan 28, 2000
Parametry
- Configuration Single Dual Base Dual Collector Quad Emitter
- Maximum 3rd Order Intercept Point (dBm) N/A
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) 30
- Maximum Collector-Emitter Saturation Voltage (V) N/A
- Maximum Collector-Emitter Voltage (V) 16
- Maximum Collector-Emitter Voltage Range (V) <20
- Maximum DC Collector Current (A) 0.2
- Maximum DC Collector Current Range (A) 0.12 to 0.5
- Maximum Emitter Base Voltage (V) 3
- Maximum Noise Figure (dB) N/A
- Maximum Power 1dB Compression (dBm) N/A
- Maximum Power Dissipation (mW) 2200
- Maximum Rise Time (ns) N/A
- Maximum Storage Temperature (°C) 150
- Maximum Transition Frequency (MHz) N/A
- Maximum Turn-Off Time (ns) N/A
- Maximum Turn-On Time (ns) N/A
- Minimum DC Current Gain 30@50mA@5V
- Minimum DC Current Gain Range 30 to 50
- Minimum Storage Temperature (°C) -65
- Number of Elements per Chip 1
- Operational Bias Conditions N/A
- Output Power (W) 0.75
- Supplier Temperature Grade N/A
- Type NPN
- Typical Power Gain (dB) 9.5