MRF837GT
| Do pobrania | Download |
|---|---|
| Main description | Power Devices, Up to 1 GHz, Class A, B, and C, Common Emitter |
Power Devices, Up to 1 GHz, Class A, B, and C, Common Emitter
Informacje podstawowe
- ProducentMicrosemi
- EURoHSUnknown (2002/95/EC)
- Automotive No
Informacje dodatkowe
- PCNs 34
- MaskPart MRF837GT%
- IntroductionDate Jan 01, 2000
Parametry
- Category Bipolar Power
- Configuration Dual Common Emitter
- Material N/A
- Maximum 3rd Order Intercept Point (dBm) N/R
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) N/A
- Maximum Collector-Emitter Saturation Voltage (V) N/A
- Maximum Collector-Emitter Voltage (V) N/A
- Maximum DC Collector Current (A) N/A
- Maximum Delay Time (ns) N/A
- Maximum Emitter Base Voltage (V) N/A
- Maximum Fall Time (ns) N/A
- Maximum Noise Figure (dB) N/A
- Maximum Power 1dB Compression (dBm) N/R
- Maximum Power Dissipation (mW) N/A
- Maximum Rise Time (ns) N/A
- Maximum Storage Temperature (°C) N/A
- Maximum Storage Time (ns) N/A
- Maximum Transition Frequency (MHz) N/A
- Maximum Turn-Off Time (ns) N/A
- Maximum Turn-On Time (ns) N/A
- Minimum DC Current Gain N/A
- Minimum Storage Temperature (°C) N/A
- Number of Elements per Chip 2
- Operational Bias Conditions N/R
- Output Power (W) N/R
- Supplier Temperature Grade N/A
- Type N/A
- Typical Power Gain (dB) N/R