MRF9011MLT1
| Main description | Trans RF BJT NPN 15V 0.03A 375mW 4-Pin SOT-143 |
|---|
Trans RF BJT NPN 15V 0.03A 375mW 4-Pin SOT-143
Informacje podstawowe
- ProducentMicrosemi
- EURoHSUnknown (2002/95/EC)
- Automotive No
Informacje dodatkowe
- Crosses 50
- PCNs 34
- MaskPart MRF9011MLT1%
- IntroductionDate Apr 09, 2008
Parametry
- Configuration Single
- Material Si
- Maximum 3rd Order Intercept Point (dBm) N/A
- Maximum Base Emitter Saturation Voltage (V) N/A
- Maximum Collector Base Voltage (V) 25
- Maximum Collector-Emitter Saturation Voltage (V) N/A
- Maximum Collector-Emitter Voltage (V) 15
- Maximum Collector-Emitter Voltage Range (V) <20
- Maximum DC Collector Current (A) 0.03
- Maximum DC Collector Current Range (A) 0.001 to 0.06
- Maximum Emitter Base Voltage (V) 2
- Maximum Noise Figure (dB) 1.8(Typ)
- Maximum Power 1dB Compression (dBm) N/A
- Maximum Power Dissipation (mW) 375
- Maximum Rise Time (ns) N/A
- Maximum Storage Temperature (°C) 150
- Maximum Transition Frequency (MHz) N/A
- Maximum Turn-Off Time (ns) N/A
- Maximum Turn-On Time (ns) N/A
- Minimum DC Current Gain 30@5mA@5V
- Minimum DC Current Gain Range 30 to 50
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Operational Bias Conditions N/A
- Output Power (W) N/A
- Supplier Temperature Grade N/A
- Type NPN
- Typical Power Gain (dB) N/A