S29GL512P10FFIR20
| Do pobrania | Download |
|---|---|
| Main description | NOR Flash Parallel 3V/3.3V 512M-bit 64M x 8/32M x 16 100ns 64-Pin Fortified BGA Tray |
NOR Flash Parallel 3V/3.3V 512M-bit 64M x 8/32M x 16 100ns 64-Pin Fortified BGA Tray
Informacje podstawowe
- ProducentCypress Semiconductor
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 97
- Inventory 1
- PCNs 41
- GIDEP-Alerts 2
- MaskPart S29GL512P10FFIR2%
- IntroductionDate May 25, 2007
- SupplierUrl http://www.cypress.com/?app=search&searchType=part&keywords=S29GL512P10FFIR20
Parametry
- Address Bus Width (bit) 26/25
- Architecture Sectored
- Bank Size N/R
- Block Organization Symmetrical
- Boot Block No
- Cell Type NOR
- Command Compatible No
- Density (bit) 512M
- Density in Bits (bit) 536870912
- ECC Support No
- Erase Suspend/Resume Modes Support Yes
- Interface Type Parallel
- Location of Boot Block N/R
- Maximum Access Time (ns) 100
- Maximum Erase Time (s) 1024/Chip
- Maximum Page Access Time (ns) 25
- Maximum Programming Time (ms) 492000(Typ)/Chip
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -65
- Number of Banks N/A
- Number of Bits per Word (bit) 8/16
- Number of Words 64M/32M
- OE Access Time (ns) 25
- Page Read Current (mA) 10@10MHz
- Page Size 8Words/16byte
- Program Current (mA) 90
- Programmability Yes
- Programming Voltage (V) 3 to 3.6|11.5 to 12.5
- Sector Size 128Kbyte x 512
- Simultaneous Read/Write Support No
- Supplier Temperature Grade Industrial
- Support of Common Flash Interface Yes
- Support of Page Mode Yes
- Timing Type Asynchronous