Si3442BDV
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET N-CH 20V 3A 6-Pin TSOP |
Trans MOSFET N-CH 20V 3A 6-Pin TSOP
Informacje podstawowe
- ProducentVishay
- EURoHSNo (2011/65/EU)
- Automotive No
Informacje dodatkowe
- Crosses 18
- Inventory 3*
- PCNs 22
- MaskPart Si3442BDV%
- IntroductionDate Oct 23, 2003
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type N
- Configuration Single Quad Drain
- Material N/A
- Maximum Continuous Drain Current (A) 3
- Maximum Drain Source Resistance (mOhm) 90@2.5V
- Maximum Drain Source Voltage (V) 20
- Maximum Gate Source Voltage (V) ±12
- Maximum Power Dissipation (mW) 1670
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 15
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) 3@4.5V
- Typical Input Capacitance @ Vds (pF) N/A
- Typical Rise Time (ns) 50
- Typical Turn-Off Delay Time (ns) 20
- Typical Turn-On Delay Time (ns) 35