SI4559ADY-T1-GE3

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Main description	Trans MOSFET N/P-CH 60V 4.3A/3A 8-Pin SOIC N T/R

Trans MOSFET N/P-CH 60V 4.3A/3A 8-Pin SOIC N T/R

Informacje podstawowe

Category Power MOSFET
Channel Mode Enhancement
Channel Type N|P
Configuration Dual Dual Drain
Material N/A
Maximum Continuous Drain Current (A) 4.3@N Channel|3@P Channel
Maximum Drain Source Resistance (mOhm) 58@10V
Maximum Drain Source Voltage (V) 60
Maximum Gate Source Leakage Current (nA) 100
Maximum Gate Source Voltage (V) ±20
Maximum Gate Threshold Voltage (V) 3
Maximum IDSS (uA) 1
Maximum Operating Temperature (°C) 150
Maximum Power Dissipation (mW) 2000
Maximum Storage Temperature (°C) 150
Minimum Operating Temperature (°C) -55
Minimum Storage Temperature (°C) -55
Number of Elements per Chip 2
Process Technology TrenchFET
Supplier Temperature Grade N/A
Typical Fall Time (ns) 10@N Channel|30@P Channel
Typical Gate Charge @ 10V (nC) 13@N Channel|14.5@P Channel
Typical Gate Charge @ Vgs (nC) 13@10V|6@4.5V@N Channel|14.5@10V|8@4.5V@P Channel
Typical Input Capacitance @ Vds (pF) 665@15V@N Channel|650@15V@P Channel
Typical Rise Time (ns) 65|15@N Channel|70|13@P Channel
Typical Turn-Off Delay Time (ns) 15|20@N Channel|40|35@P Channel
Typical Turn-On Delay Time (ns) 15|10@N Channel|30|10@P Channel