Si7149ADP-T1-GE3
| Do pobrania | Download |
|---|---|
| Main description | Trans MOSFET P-CH 30V 23.1A 8-Pin PowerPAK SO EP T/R |
Trans MOSFET P-CH 30V 23.1A 8-Pin PowerPAK SO EP T/R
Informacje podstawowe
- ProducentVishay
- EURoHSYes (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- Crosses 9
- Inventory 8
- PCNs 30
- GIDEP-Alerts 4
- FoundINBOMs 1
- MaskPart Si7149ADP%GE3
- IntroductionDate Jun 25, 2013
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Single Quad Drain Triple Source
- Material N/A
- Maximum Continuous Drain Current (A) 23.1
- Maximum Drain Source Resistance (mOhm) 5.2@10V
- Maximum Drain Source Voltage (V) 30
- Maximum Gate Source Leakage Current (nA) 100
- Maximum Gate Source Voltage (V) ±25
- Maximum Gate Threshold Voltage (V) 2.5
- Maximum IDSS (uA) 1
- Maximum Power Dissipation (mW) 5000
- Maximum Storage Temperature (°C) 150
- Minimum Storage Temperature (°C) -55
- Number of Elements per Chip 1
- Process Technology TrenchFET
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 12|26
- Typical Gate Charge @ 10V (nC) 90
- Typical Gate Charge @ Vgs (nC) 90@10V|43.1@4.5V
- Typical Input Capacitance @ Vds (pF) 5125@15V
- Typical Rise Time (ns) 12|60
- Typical Turn-Off Delay Time (ns) 52|58
- Typical Turn-On Delay Time (ns) 15|60