SMBJ85CA M4G

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Main description Diode TVS Single Bi-Dir 85V 600W 2-Pin SMB T/R
Diode TVS Single Bi-Dir 85V 600W 2-Pin SMB T/R

Informacje podstawowe

  • ProducentTaiwan Semiconductor
  • EURoHSYes with Exemption (2011/65/EU, 2015/863)
  • Automotive No

Informacje dodatkowe

  • Crosses 307
  • PCNs 6
  • MaskPart SMBJ85CA%G

Parametry

  • Capacitance Value (pF) N/A
  • Configuration Single
  • Direction Type Bi-Directional
  • Maximum Breakdown Voltage (V) 104
  • Maximum Clamping Voltage (V) 137
  • Maximum Forward Voltage (V) N/A
  • Maximum Operating Temperature (°C) 150
  • Maximum Peak Pulse Current (A) 4.6
  • Maximum Reverse Leakage Current (uA) 1
  • Maximum Reverse Stand-Off Voltage (V) 85
  • Maximum Storage Temperature (°C) 150
  • Minimum Breakdown Voltage (V) 94.4
  • Minimum Operating Temperature (°C) -55
  • Minimum Storage Temperature (°C) -55
  • Number of Elements per Chip 1
  • Operating Junction Temperature (°C) -55 to 150
  • Peak Forward Surge Current (A) N/A
  • Peak Pulse Power Dissipation (W) 600
  • Supplier Temperature Grade N/A
  • Test Current (mA) 1
  • Tradename N/A
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