Trans MOSFET P-CH Si 7V 6A
Informacje podstawowe
- ProducentTexas Instruments
- EURoHSNo (2011/65/EU, 2015/863)
- Automotive No
Informacje dodatkowe
- PCNs 39
- MaskPart TPS1110Y%
- IntroductionDate Oct 01, 1994
Parametry
- Category Power MOSFET
- Channel Mode Enhancement
- Channel Type P
- Configuration Single Quad Drain Triple Source
- Material Si
- Maximum Continuous Drain Current (A) 6
- Maximum Drain Source Resistance (mOhm) 65@4.5V
- Maximum Drain Source Voltage (V) 7
- Maximum Gate Source Voltage (V) ±7
- Maximum Power Dissipation (mW) 1250
- Number of Elements per Chip 1
- Supplier Temperature Grade N/A
- Typical Fall Time (ns) 4.5
- Typical Gate Charge @ 10V (nC) N/A
- Typical Gate Charge @ Vgs (nC) 4.3@6V
- Typical Input Capacitance @ Vds (pF) 275@6V
- Typical Rise Time (ns) 22
- Typical Turn-Off Delay Time (ns) 22
- Typical Turn-On Delay Time (ns) 5.8